Saturation Mechanism in Mid-Infrared SH-LED
Abstract
Single hetero-junction light emitting diode (SH-LED) based on P+-InAs0.36Sb0.20P0.44/ n0-InAs/n+-In As material system for operation in 2.4–3.5 µm spectral range at room temperature. The model developed for the purpose takes into account all dominating radiate and non-radiate recombination processes, interfacial recombination and self-absorption in the active layer of the SH-LED structure. The effect of these processes on the quantum efficiency, modulation bandwidth and output power of the SH-LED under high carrier injection have been considered in this model. The output power of the SH-LED has been computed as a function of bias current and it is found to be in good agreement with reported experimental results.
How to cite this article:
Meena DK, Sharma S. Saturation Mechanism in Mid-Infrared SH-LED. J Adv Res Electro Engi Tech 2020; 7(2): 12-15
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