Annealing Effect on Microstructure and Electrical Characteristics  of  n-ZnO/p-Si  Heterojunction Diode Fabricated by RF Sputtering Process

Vinod N Shukla; Umesh Soni,; Ramesh Chandra Prajapati

Vinod N Shukla Department of Applied Science, Global Institute of Technology, Jaipur, Rajasthan India
Umesh Soni, Department of Electrical Engineering, Global Institute of Technology, Jaipur (Rajasthan) India.
Ramesh Chandra Prajapati Materials Research Centre, Malaviya National Institute of Technology, Jaipur, Rajasthan, India.

Abstract

This article reports fabrication and microstructural characterization of n-ZnO/p-Si heterojunction diode. Nanostructured Zinc Oxide (ZnO) thin film was deposited on p-type silicon (Si) and glass substrates using RF sputtering process for fabricating n-ZnO/p-Si heterojunction diode. The effect of annealing temperature on the structural and morphological properties of ZnO thin films has been observed. After deposition, these films are annealed. Structural properties, surface morphology and quality of thin film have been studied using XRD, AFM, FE-SEM and Energy Dispersive X-ray Spectroscope (EDX) measurements. XRD results confirms the formation of ZnO. The crystallite size of ZnO films was increased by annealing it at 523 K. The average crystallite size of as deposited nanostructured ZnO thin film was found to be 28 nm. The junction properties of n-ZnO/p-Si heterojunction diodes were investigated using current–voltage measurements. The current were analyzed by sweeping the voltage from -6V to +6V and and the knee voltage was found to be around 1.9V.

How to cite this article:
Soni U, Shukla VN, Prajapati RC. Annealing Effect on Microstructure and Electrical Characteristics
of n-ZnO/p-Si Heterojunction Diode Fabricated by RF Sputtering Process. J Adv Res Electro Engi Tech 2020; 7(1): 1-5.

DOI: https://doi.org/10.24321/2456.1428.202001

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